sbta35g04b thru sbta35g16b discrete triacs (isolated) sbta35g04b SBTA35G06B sbta35g10b sbta35g12b sbta35g16b v drm/rrm v 400 600 1000 1200 1600 v dsm/rsm v 450 650 1100 1300 1700 symbol test conditions maximum ratings unit t vj =80 35 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 390 350 330 290 a i tsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 850 800 720 380 a 2 s i 2 t (di/dt) cr 50 300 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 500 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =300us 10 5 w p ga v 1 w i trms o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1minute, leads-to-tab 2500 v~ m d mounting torque (m4) 0.8...1.5 nm w eight 25 g t vj =t vjm repetitive, i t =40a f=50hz, t p =200us v d =2/3v drm i g =0.3a non repetitive, i t =i tavm di g /dt=0.3a/us v rgm 10 v o c unit:mm t2 t1 g 1 2 3 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sbta35g04b thru sbta35g16b discrete triacs(isolated) symbol test conditions characteristic values unit 9 v tm i t =50a; t vj =25 o c 1.45 v to ) r u s r z h u o r v v f d o f x o d w l r q v r q o \ 7 9 - r & 9 r t 9 v gt 1.3 v v d =6v; i t =1a;t vj =25 o c i gt 50 a v gd 7 9 - 7 9 - 0 9 ' 9 ' 5 0 9 i gd p $ i h 7 9 - r & 9 ' 9 5 * . p $ ' & f x u u h q w r thjc 1.4 dc r thjh 1.6 a 0 d [ d f f h o h u d w l r q + ] p v i r , i d t vj =t vjm ; v d =v drm 10 a v d =6v; i t =1a;t vj =25 o c 50 50 100 1.3 1.3 1.5 p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
fig. 1: maximum power dissipation versus rms on-state cur rent (full cycle). fig. 2: rms on-state current versus case temperature (full cycle). 0 5 1 0 1 5 2 0 2 5 3 0 3 5 41 0 1 0 2 0 3 0 4 0 50 it(rms) (a) p (w) 1 8 0? 0 25 50 75 1 0 0 1 2 5 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 tc(c) it(rms) (a) = 1 8 0 ? fig. 3: relative variation of thermal impedance versus puls e duration. fig. 4: on- state characteristics (maximum values). fig. 5 : surge peak on-state current versus number of c ycles. fig. 6 : n on-r e petitive surge peak on-state current fo r a sinusoidal pulse with width tp < 10 ms, a n d corresponding value of i2t. 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 1.e-03 1.e-02 1.e-01 1.e+00 k=[zth/rth] z th (j-c ) tp (s ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 400 vtm (v) itm (a) t j= 2 5?c t j m a x tj max.: vto = 0.85 v rd = 10 m ? 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 number of c ycles itsm (a) non repetitive tj initial=25c r e p e titiv e t c = 7 0? c o n e c y c le t= 2 0 m s 0.01 0.10 1.00 10.0 0 100 1000 10000 tp (ms) itsm (a), i2t (a2s) tj initial=25c it s m i2t d i/d t lim ita tio n : 5 0 a / s sbta35g04b thru sbta35g16b discrete triacs (isolated) p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
fig. 7: relative variation of gate trigger current, holding curre nt and latching current versus junction te m perature (typical values). fig. 8: re l ative variation of critical rate of decrease of main cur rent versus (dv/dt)c (typical values). -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 tj(c) igt,ih,il[tj] / igt ,ih,il [tj=25c] igt ih & il 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dv/dt)c (v/s) (di/dt)c [(dv/dt)c] / specified (di/dt)c fig. 9: relative variation of critical rate of decrease of ma ? n curre n t versus junction temperature . 0 25 50 75 100 125 0 1 2 3 4 5 6 tj (c) (di/dt)c [tj] / (di/dt)c [tj specified] sbta35g04b thru sbta35g16b discrete triacs (isolated) p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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